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| 2SK972 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 20 25 100 25 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK972 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.033 0.05 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 12 -- -- -- -- -- -- -- -- 20 1400 720 220 15 130 270 180 1.3 10 250 2.0 0.04 0.06 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 25 A, VGS = 0 IF = 25 A, VGS = 0, diF/dt = 50 A/s ID = 15 A, VGS = 10 V, RL = 2 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------- --------------------- ID = 15 A, VGS = 4 V * ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 135 -- ns -------------------------------------------------------------------------------------- 2SK972 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 500 300 Maximum Safe Operation Area is Drain Current ID (A) 100 O lim pe ite rat d ion by in R th ar ea 10 (o n) 40 is 10 D C 0 s 30 10 3 1.0 D s PW S O s (1 ms 1 0m 1 = n (T pe ra tio 20 Sh ot C 25 C = ) ) Ta = 25C 0 50 100 Case Temperature TC (C) 150 0.5 0.1 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 8V 6V 50 4.5 V Drain Current ID (A) 4.0 V Pulse Test 3.5 V 20 3.0 V 10 VGS = 2.5 V 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 40 Typical Transfer Characteristics 75C VDS = 10 V Pulse Test TC= 25C -25C 40 Drain Current ID (A) 30 30 20 10 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK972 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Drain to Source Saturation Voltage VDS (on) (V) 4 Static Drain to Source on Static Resistance RDS (on) () Pulse Test 0.5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.2 VGS = 4 V 0.1 0.05 10 V 3 ID = 50 A 2 0.02 0.01 0.005 1 2 5 20 10 50 Drain Current ID (A) 100 1 20 A 10 A 6 2 4 8 10 Gate to Source Voltage VGS (V) 0 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test ID = 20 A 0.08 VGS = 4 V 10 A 0.04 5A 0.02 VGS = 10 V 10 A Forward Transfer Admittance yfs (S) 0.10 100 50 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test -25C TC = 25C 0.06 20 10 5 2 1 0.5 75C 20 A 5 A 0 -40 0 40 120 80 Case Temperature TC (C) 160 1.0 2 10 20 5 Drain Current ID (A) 50 2SK972 Body to Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test Capacitance C (pF) 10,000 3,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 1,000 Coss 300 Crss 100 30 10 500 200 100 50 20 10 0.5 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDD = 50 V 80 25 V 10 V 60 VDS 40 20 VDD = 50 V 25 V 10 V VGS 12 16 20 Gate to Source Voltage VGS (V) 1000 500 Switching Time t (ns) Switching Characteristics td (off) tf 200 100 tr 50 20 10 0.5 8 4 ID = 25 A 0 100 VGS = 10 V PW = 2s, duty < 1 % td (on) 1.0 2 5 10 20 Drain Current ID (A) 50 0 20 40 60 80 Gate Charge Qg (nc) 2SK972 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) 40 Pulse Test 30 10 V 15 V 20 5V 10 VGS = 0, -5 V 0 0.4 1.2 0.8 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 TC = 25C 1.0 0.2 0.1 0.03 0.01 10 0.05 0.02 lse 1 0.0 ot Pu Sh 1 ch-c(t) = S (t) * ch-c ch-c = 2.5C/W, TC = 25C PDM PW 1 D = PW T 10 T 1m 10 m Pulse Width PW (s) 100 m 100 2SK972 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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